AIKB30N65DF5ATMA1

AIKB30N65DF5ATMA1 Description

The AIKB30N65DF5ATMA1 IGBT is World-class low-cost power for fast-switching applications in small SMD packages.

AIKB30N65DF5ATMA1 Features

• TRENCHSTOP? 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed

• 650V break-down voltage, 30A nominal current

• Co-packed with RAPID-1 fast and soft anti-parallel diode

• Very fast switching (up to 150kHz)

• Automotive qualified in accordance with Infineon quality standards

• Max junction temperature 175 °C

• Highest efficiency

• Very low junction and case temperature

• SMD D2PAK package for low assembly costs and higher power density

• Extremely robust

AIKB30N65DF5ATMA1 Applications

• On-Board Charger (mainly in the PFC stage)

• DC-DC or DC-AC

• Auxiliary drive (e.g. Motor drive)