Name: STGD10NC60ST4
Brand: STMicroelectronics
SKU: STGD10NC60ST4
Price: 2.32000 USD
Availability: InStock

new-10%

STGD10NC60ST4

Manufacturer part number:STGD10NC60ST4

Manufacturer:STMicroelectronics

Description:STGD10NC60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD10NC60ST4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGD10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	60W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	18A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	22.5 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 5A
Turn Off Time-Nom (toff)	560 ns
Gate Charge	18nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	19ns/160ns
Switching Energy	60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
RoHS Status	ROHS3 Compliant

STGD10NC60ST4 Product Details

STGD10NC60ST4 Description

STGD10NC60ST4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGD10NC60ST4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

STGD10NC60ST4 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STGD10NC60ST4 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display