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STGD18N40LZ-1

STGD18N40LZ-1

STGD18N40LZ-1

STMicroelectronics

STGD18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD18N40LZ-1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureVOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation125W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGD18
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Logic
Power - Max 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 25A
Collector Emitter Breakdown Voltage420V
Max Breakdown Voltage 420V
Turn On Time4450 ns
Test Condition 300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff) 22200 ns
Gate Charge29nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 650ns/13.5μs
Gate-Emitter Voltage-Max 16V
RoHS StatusROHS3 Compliant
In-Stock:3581 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.75000$1.75
75$1.50240$112.68
150$1.25040$187.56
525$1.04880$550.62

STGD18N40LZ-1 Product Details

STGD18N40LZ-1 Description


STGD18N40LZ-1 developed by STMicroelectronics is a type of automotive-grade 390 V internally clamped IGBT specifically optimized for automotive applications. It is designed based on the most advanced PowerMESH? technology to obtain low saturation voltage and high pulsed current capability. Overvoltage protection capabilities are provided by the built-in Zener diodes between the gate collector and gate emitter. Moreover, it is capable of delivering low on-state voltage drop and low threshold drive, making it well suited for use in the automotive ignition system.



STGD18N40LZ-1 Features


Low on-state voltage drop

Low threshold drive

Low saturation voltage

High pulsed current capability

Package: IPAK



STGD18N40LZ-1 Applications


Pencil coil electronic ignition driver


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