Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGBL6NC60DT4

STGBL6NC60DT4

STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGBL6NC60DT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation56W
Terminal FormGULL WING
Base Part Number STGBL6
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Turn On Delay Time6.7 ns
Power - Max 56W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 67 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 14A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage600V
Max Breakdown Voltage 600V
Turn On Time10.5 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Turn Off Time-Nom (toff) 122 ns
Gate Charge12nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 6.7ns/46ns
Switching Energy 46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5225 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.663920$3.66392
10$3.456528$34.56528
100$3.260876$326.0876
500$3.076298$1538.149
1000$2.902168$2902.168

STGBL6NC60DT4 Product Details

STGBL6NC60DT4 Description

This series of hyper fast IGBT is based onPowerMESH technology and exhibits very lowturn-off energy, thanks to a new lifetime controlsystem. This results in an optimized trade-offbetween on-state voltage and switching losses,allowing very high operating frequencies.


STGBL6NC60DT4 Features

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Very soft ultra fast recovery antiparallel diode


STGBL6NC60DT4 Applications

■ Very high frequency operation

■ High frequency lamp ballast

■ SMPS and PFC (including hard switching)



Get Subscriber

Enter Your Email Address, Get the Latest News