STGF35HF60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGF35HF60W Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Weight
2.299997g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
40W
Base Part Number
STGF35
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
30 ns
Power - Max
40W
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
225 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
19A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
30ns/175ns
Switching Energy
290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2710 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.786402
$0.786402
10
$0.741889
$7.41889
100
$0.699894
$69.9894
500
$0.660279
$330.1395
1000
$0.622904
$622.904
STGF35HF60W Product Details
STGF35HF60W Description
A new planar technology was used to create this ultrafast IGBT, which has a narrower switching energy variation (Eoff) against temperature. A subset of items created for high switching frequency operation are identified by the suffix "W." (over 100 kHz).
STGF35HF60W Features
Improved Eoff at elevated temperature
Minimal tail current
Low conduction losses
STGF35HF60W Applications
Welding
High frequency converters
Power factor correction
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