STGWT20V60F Description
This STGWT20V60F is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT20V60F is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT20V60F Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGWT20V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
