STGB6M65DF2 Description
This STGB6M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGB6M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGB6M65DF2 Features
6 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGB6M65DF2 Applications
Motor control
UPS
PFC
