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STGW30NC60WD

STGW30NC60WD

STGW30NC60WD

STMicroelectronics

STGW30NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW30NC60WD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation200W
Current Rating60A
Base Part Number STGW30
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time29.5 ns
Transistor Application POWER CONTROL
Rise Time12ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 118 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time42.5 ns
Test Condition 390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 189 ns
Gate Charge102nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 29.5ns/118ns
Switching Energy 305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1503 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.74000$4.74
30$4.07400$122.22
120$3.57108$428.5296
510$3.08506$1573.3806

STGW30NC60WD Product Details

STGW30NC60WD Description


The STMicroelectronics STGW30NC60WD IGBT utilizes the advanced Power MESH? process resulting in an excellent trade-off between switching performance and low on-state behaviour.



STGW30NC60WD Features


  • Lower CRES / CIES ratio (no cross-conduction susceptibility)

  • Very soft ultra-fast recovery antiparallel diode

  • High-frequency operation



STGW30NC60WD Applications


  • HF, SMPS and PFC in both hard switch and resonant topologies

  • High-frequency motor controls, inverters, UPS


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