FGH50N3 Description
The IGBT FGH50N3uses on Semiconductor's planar technology and is ideal for many high-frequency and high-voltage switching applications, where low conduction loss is critical. The device has been optimized for intermediate frequency switching mode power supply.
FGH50N3 Features
? Low Saturation Voltage: VCE(sat) = 1.4 V Max
? Low EOFF = 6.6 uJ/A
? SCWT = 8 s @ = 125°C
? 300 V Switching SOA Capability
? Positive Temperature Coefficient above 50 A
? This is a Pb?Free Device
FGH50N3 Applications
? SMPS
