STGP10NC60H

Name: STGP10NC60H
Brand: STMicroelectronics
SKU: STGP10NC60H
Price: 1.96000 USD
Availability: InStock

new-10%

Manufacturer part number:STGP10NC60H

Manufacturer:STMicroelectronics

Description:STGP10NC60H datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP10NC60H Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	60W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP10
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	22 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	19 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Turn Off Time-Nom (toff)	247 ns
Gate Charge	19.2nC
Td (on/off) @ 25°C	14.2ns/72ns
Switching Energy	31.8μJ (on), 95μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free