NDP603AL Description
This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. In low voltage applications like DC/DC converters and high efficiency switching circuits, where quick switching, little in-line power loss, and resistance to transients are required, these devices are especially well-suited.
NDP603AL Features
25A, 30V. RDS(ON) = 0.022W @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
NDP603AL Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
