STB33N60M2

Name: STB33N60M2
Brand: STMicroelectronics
SKU: STB33N60M2
Price: 5.09000 USD
Availability: InStock

new-10%

Manufacturer part number:STB33N60M2

Manufacturer:STMicroelectronics

Description:STB33N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB33N60M2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	3.949996g
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	MDmesh™ II Plus
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB33N
Number of Channels	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Power Dissipation	190W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	125m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1781pF @ 100V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	45.5nC @ 10V
Rise Time	9.6ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	109 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free