Description
The FDMS86101DC MOSFET - N-Channel, POWERTRENCH?, DUAL COOL? 56 Shielded Gate 100 V, 60 A, 7.5 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. The lowest rDS(on) while maintaining good switching performance is now possible because of advancements in both silicon and DUAL COOL? package technologies. This is made possible by the exceptionally low Junction-to-Ambient thermal resistance.
Features
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
Shielded Gate MOSFET Technology
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 7.5 m at VGS = 10 V, ID = 14.5 A
Max rDS(on) = 12 m at VGS = 6 V, ID = 11.5 A
Applications
