Name: STF13NK50Z
Brand: STMicroelectronics
SKU: STF13NK50Z
Price: 2.84000 USD
Availability: InStock

new-10%

STF13NK50Z

Manufacturer part number:STF13NK50Z

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 480m Ω @ 6.5A, 10V ±30V 1600pF @ 25V 47nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STF13NK50Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STF13
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	6.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.48Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	44A
Dual Supply Voltage	500V
Avalanche Energy Rating (Eas)	240 mJ
Nominal Vgs	3.75 V
Height	16.4mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STF13NK50Z Product Details

STF13NK50Z Description

The SuperMESH series is obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure an excellent dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs.