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IRFR1205TRPBF

IRFR1205TRPBF

IRFR1205TRPBF

Infineon Technologies

IRFR1205TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR1205TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 27mOhm
Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating37A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 107W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation69W
Case Connection DRAIN
Turn On Delay Time7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time69ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 37A
Threshold Voltage 4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 98 ns
Nominal Vgs 4 V
Height 2.3876mm
Length 6.7056mm
Width 6.8mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:4770 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.49000$1.49
500$1.4751$737.55
1000$1.4602$1460.2
1500$1.4453$2167.95
2000$1.4304$2860.8
2500$1.4155$3538.75

IRFR1205TRPBF Product Details

IRFR1205TRPBF Description


IRFR1205TRPBF belongs to the family of HEXFET? power MOSFETs provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is well suited for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.



IRFR1205TRPBF Features


  • Low RDS (on)

  • Low on-state resistance per silicon area

  • Advanced switching performance

  • Ruggedized device design

  • Available in the D-Pak package



IRFR1205TRPBF Applications


  • High-frequency synchronous buck converters for computer processor power

  • High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use


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