Name: FDA18N50
Brand: ON Semiconductor
SKU: FDA18N50
Price: 3.42000 USD
Availability: InStock

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FDA18N50

Manufacturer part number:FDA18N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 265m Ω @ 9.5A, 10V ±30V 2860pF @ 25V 60nC @ 10V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FDA18N50 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	7 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	265MOhm
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	239W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	239W
Turn On Delay Time	55 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	265m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	165ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	76A
Avalanche Energy Rating (Eas)	945 mJ
Height	18.9mm
Length	15.8mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDA18N50 Product Details

FDA18N50 Description

FDA18N50 MOSFET is a high-voltage MOSFET that uses DMOS and planar stripe technology. The FDA18N50 MOSFET has been designed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. FDA18N50 MOSFETs are excellent for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic light ballasts.