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STD6NF10T4

STD6NF10T4

STD6NF10T4

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 250m Ω @ 3A, 10V ±20V 280pF @ 25V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

STD6NF10T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Series STripFET™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 250mOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureLOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating6A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD6N
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 30W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation30W
Case Connection DRAIN
Turn On Delay Time6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 200 mJ
Height 2.4mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5660 items

Pricing & Ordering

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STD6NF10T4 Product Details

STD6NF10T4 Description

This Power MOSFET series realized with STMicroelectronics's unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is, therefore, suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.



STD6NF10T4 Features

Exceptional dv/dt capability

100% avalanche tested



STD6NF10T4 Applications

Switching applications



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