IPT026N10N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IPT026N10N5ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Operating Temperature
-55°C~175°C TJ
Series
OptiMOS™5
Part Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
214W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.6m Ω @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 158μA
Input Capacitance (Ciss) (Max) @ Vds
8800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
27A Ta 202A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
In-Stock:1414 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.26000
$6.26
500
$6.1974
$3098.7
1000
$6.1348
$6134.8
1500
$6.0722
$9108.3
2000
$6.0096
$12019.2
2500
$5.947
$14867.5
IPT026N10N5ATMA1 Product Details
IPT026N10N5ATMA1 Description
IPT026N10N5ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of IPT026N10N5ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 214W Tc. IPT026N10N5ATMA1 has 3 pins and it is available in 8-PowerSFN packaging way.
