Name: FDH5500
Brand: ON Semiconductor
SKU: FDH5500
Price: 1.56000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	UltraFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
JESD-30 Code	R-PSFM-T3
Power Dissipation-Max	375W Tc
Element Configuration	Single
Power Dissipation	375W
Turn On Delay Time	13.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3565pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	268nC @ 20V
Rise Time	102ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Radiation Hardening	No
RoHS Status	RoHS Compliant

FDH5500 Product Details

FDH5500 Description

The FDH5500 is a 55V N-channel UltraFET Power MOSFET designed for DC linear mode control, solenoid/motor control, and switching regulators applications. The onsemi FDH5500 is general usage and suitable for many different applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDH5500 is in the TO-247-3 package with 375W power dissipation.

FDH5500 Features

Typ rDS(on) = 5.2m? at VGS = 10V, ID = 75A
Typ Qg(10) = 118nC at VGS = 10V
Simulation Models -Temperature Compensated PSPICE and SABERTM Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature -TB334, “Guidelines for Soldering Surface MountComponets to PC Boards“
Qualified to AEC Q101
RoHS Compliant