STD14NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD14NM50N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
320mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Base Part Number
STD14
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
DRAIN
Turn On Delay Time
10.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
816pF @ 50V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
48A
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1702 items
STD14NM50N Product Details
STD14NM50N Description
STD14NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STD14NM50N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
Designed for automotive applications and AEC-Q101 qualified
STD14NM50N Applications
Enterprise systems
Personal electronics
Switching applications
Communications equipment
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