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STB57N65M5

STB57N65M5

STB57N65M5

STMicroelectronics

STB57N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB57N65M5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier D2PAK-0079457
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series MDmesh™ V
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 63mOhm
Terminal Finish Matte Tin (Sn) - annealed
Technology MOSFET (Metal Oxide)
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB57N
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation250W
Case Connection DRAIN
Turn On Delay Time73 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 63m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 960 mJ
Max Junction Temperature (Tj) 150°C
Height 4.83mm
Length 10.4mm
Width 9.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:588 items

Pricing & Ordering

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STB57N65M5 Product Details

STB57N65M5 N-Channel MOSFET Description


The STB57N65M5 N-Channel MOSFET is manufactured by STMicroelectronics. It's rated at 650 V and is offered with TO-220, TO-220FP, I2PAK, and D2PAK packages for different design requirements. It is capable of operating within -55~150 ℃. In all packages this MOSFET provides, a max Drain current can be guaranteed under 25 ℃ ambient temperature.



STB57N65M5 N-Channel MOSFET Features


  • 100% avalanche tested

  • Easy to drive

  • Worldwide best RDS(on)*area among the silicon-based devices

  • Excellent switching performance

  • Higher VDSS rating, high dv/dt capability



STB57N65M5 N-Channel MOSFET Applications


  • Tone Control

  • Low Noise Applications

  • Robotics

  • Cameras

  • Toys

  • Noise Generators

  • Chopper Circuits

  • Consumer Electronics

  • Audio Signals Modulation

  • Medical

  • DSLR Lenses

  • Switching Application

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