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STP60NF06

STP60NF06

STP60NF06

STMicroelectronics

STP60NF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP60NF06 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier TO-220-POA
Operating Temperature-55°C~175°C TJ
PackagingTube
Series STripFET™ II
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 16mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating60A
Base Part Number STP60N
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation110W
Turn On Delay Time15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Rise Time108ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 19.68mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3415 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.46000$1.46
50$1.17040$58.52
100$1.02410$102.41
500$0.79420$397.1

STP60NF06 Product Details

STP60NF06 Description


This Power MOSFET series, which was created using STMicroelectronics' unique S Trip FET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated high-efficiency isolated DC-DC converters for telecommunications and computer applications. It's also suitable for any application requiring a low gate charge drive. STP60NF06 has a maximum power dissipation of 110W and an operating temperature of -55°C175°C TJ. STP60NF06 features three pins and is packaged in TO-220-3 format.



STP60NF06 Features


  • Exceptional dv/dt capability

  • 100% avalanche tested

  • Application-oriented characterization



STP60NF06 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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