STW40N90K5 Description
These very high voltage N-channel PowerMOSFETs are designed using MDmesh? K5technology based on an innovative proprietaryvertical structure. The result is a dramaticreduction in on-resistance and ultra-low gatecharge for applications requiring superior powerdensity and high efficiency.
STW40N90K5 Features
· Industry’s lowest RDS(on) x area
· Industry’s best FoM (figure of merit)
· Ultra-low gate charge
· 100% avalanche tested
· Zener-protected
STW40N90K5 Applications
· Switching applications
