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STB46NF30

STB46NF30

STB46NF30

STMicroelectronics

STB46NF30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB46NF30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB46N
Configuration Single
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 42A
RoHS StatusROHS3 Compliant
In-Stock:1584 items

Pricing & Ordering

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STB46NF30 Product Details

STB46NF30 Description

These Power MOSFETs have been developed using the STMicroelectronics'unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DCDC converters for telecom and computer applications and with low gate charge driving requirements.


STB46NF30 Features

Exceptional dv/dt capability

100% avalanche tested

Low gate charge


STB46NF30 Applications

Switching applications


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