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STS11NF30L

STS11NF30L

STS11NF30L

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 10.5m Ω @ 5.5A, 10V ±18V 1440pF @ 25V 30nC @ 5V 8-SOIC (0.154, 3.90mm Width)

SOT-23

STS11NF30L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating11A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS11
Pin Count8
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 5V
Rise Time39ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±18V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 44A
Height 1.25mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5879 items

Pricing & Ordering

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STS11NF30L Product Details

STS11NF30L Description


STS11NF30L is a 30v N-channel Low gate charge STripFET? II Power MOSFET. The Power MOSFET STS11NF30L is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The transistor STS11NF30L shows extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.



STS11NF30L Features


  • Optimal RDS(on) x Qg trade-off

  • Conduction losses reduced

  • Drain-source voltage (VGS = 0): 30v

  • Drain current (continuous) at TC = 25°C: 11A

  • Peak diode recovery voltage slope: 5.5V/ns



STS11NF30L Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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