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CSD19536KCS

CSD19536KCS

CSD19536KCS

Texas Instruments

CSD19536KCS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD19536KCS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19536
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 150A Ta
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 806 mJ
Height 4.7mm
Length 10.16mm
Width 8.7mm
Thickness 4.58mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1350 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.70000$4.7
10$4.20500$42.05
50$3.79260$189.63
100$3.46300$346.3
500$2.81980$1409.9

CSD19536KCS Product Details

CSD19536KCS MOSFET Description


The CSD19536KCS is a 100 V, 2.3 mΩ, TO-220 NexFET? power MOSFET. It is designed to minimize losses in power conversion applications. It has ultra-low Qg and Qgd values and low thermal resistance as well.



CSD19536KCS MOSFET Features


TO-220 Plastic Package

Avalanche Rated

RoHS Compliant

Pb-Free Terminal Plating

Halogen Free

Low Thermal Resistance

Ultra-Low Qg and Qgd



CSD19536KCS MOSFET Applications


Secondary Side Synchronous Rectifier

Motor Control

Arduino

Servo Control

Switches

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