STB25NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB25NM60ND Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
160mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB25N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
21A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
84A
Avalanche Energy Rating (Eas)
850 mJ
Height
4.6mm
Length
10.75mm
Width
10.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2565 items
STB25NM60ND Product Details
STB25NM60ND Description
STB25NM60ND belongs to the family of N-channel FDmesh? II power MOSFETs with intrinsic fast-recovery body diode. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for bridge topologies and ZVS phase-shift converters.
STB25NM60ND Features
Improved vertical structure
Low on-state resistance
Low gate input resistance
Low input capacitance and gate charge
High dv/dt and avalanche capabilities
STB25NM60ND Applications
Bridge topologies
ZVS phase-shift converters
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