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NTD3055L170

NTD3055L170

NTD3055L170

ON Semiconductor

NTD3055L170 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD3055L170 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
HTS Code8541.29.00.95
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Current Rating9A
Pin Count3
Power Dissipation-Max 1.5W Ta 28.5W Tj
Element ConfigurationSingle
Power Dissipation28.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time69ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2260 items

NTD3055L170 Product Details

NTD3055L170 Description


NTD3055L170 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD3055L170 is -55°C~175°C TJ and its maximum power dissipation is 28.5W. NTD3055L170 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.



NTD3055L170 Features


  • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These are Pb?Free Devices



NTD3055L170 Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


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