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SD2932W

SD2932W

SD2932W

STMicroelectronics

SD2932W datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

SD2932W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 32 Weeks
Mount Screw
Package / Case M244
Number of Pins 5
PackagingTray
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Powers
Max Power Dissipation500W
Current Rating40A
Frequency 175MHz
Base Part Number SD2932
Number of Elements 2
Element ConfigurationDual
Power Dissipation500W
Current - Test 500mA
Drain to Source Voltage (Vdss) 125V
Transistor Type N-Channel
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Drain to Source Breakdown Voltage 125V
Power - Output 300W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
Min Breakdown Voltage 125V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:75 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$147.475000$147.475
10$139.127358$1391.27358
100$131.252225$13125.2225
500$123.822854$61911.427
1000$116.814013$116814.013

SD2932W Product Details

SD2932W Description

SD2932 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes SD2932W N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2932W has the excellent thermal stability.

SD2932W Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

SD2932W Applications

ISM applications

DC large signal applications


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