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MRFE6VP100HSR5

MRFE6VP100HSR5

MRFE6VP100HSR5

NXP USA Inc.

RF MOSFET Transistors VHV6 100W 50V ISM

SOT-23

MRFE6VP100HSR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-780S-4
PackagingTape & Reel (TR)
Published 2011
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 133V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 512MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP100
Operating Temperature (Max) 150°C
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 26dB
Power - Output 100W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:86 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$74.93060$3746.53

About MRFE6VP100HSR5

The MRFE6VP100HSR5 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors VHV6 100W 50V ISM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRFE6VP100HSR5, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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