SCTW35N65G2V Description
This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.
SCTW35N65G2V Features
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200°C)
SCTW35N65G2V Applications
? Switching mode power supply
? DC-DC converters
? Industrial motor control
