STP18NM60N N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STP18NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STP18NM60N Applications
Automotive
Enterprise systems
Personal electronics
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