Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXTT90P10P

IXTT90P10P

IXTT90P10P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 25m Ω @ 45A, 10V ±20V 5800pF @ 25V 120nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SOT-23

IXTT90P10P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PolarP™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 462W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 90A
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 225A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS StatusROHS3 Compliant
In-Stock:650 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$15.746354$15.746354
10$14.855051$148.55051
100$14.014199$1401.4199
500$13.220943$6610.4715
1000$12.472588$12472.588

IXTT90P10P Product Details

IXTT90P10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.Peak drain current for this device is 225A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT90P10P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)


IXTT90P10P Applications


There are a lot of IXYS
IXTT90P10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

Get Subscriber

Enter Your Email Address, Get the Latest News