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PD55015TR-E

PD55015TR-E

PD55015TR-E

STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

SOT-23

PD55015TR-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 25 Weeks
Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 3
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature165°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation73W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 250
Reach Compliance Code not_compliant
Current Rating5A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PD55015
Pin Count10
JESD-30 Code R-PDSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation73W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Gain 14dB
Max Output Power15W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Min Breakdown Voltage 40V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:466 items

Pricing & Ordering

QuantityUnit PriceExt. Price
600$14.60040$8760.24

PD55015TR-E Product Details

Description:

The STMicroelectronics PD55015TR-E is a N-channel RF power field-effect transistor (FET) in a PowerSOT-10RF package. It is designed for use in RF power amplifiers, switches, and other applications requiring high power and high gain.

Features:

• High power and high gain
• Low noise figure
• Low thermal resistance
• High breakdown voltage
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-drain leakage current
• High frequency operation

Applications:

• RF power amplifiers
• RF switches
• RF power detectors
• RF power combiners
• RF power dividers
• RF power mixers
• RF power attenuators
• RF power limiters
• RF power detectors
• RF power detectors

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