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MRF6VP41KHR7

MRF6VP41KHR7

MRF6VP41KHR7

NXP USA Inc.

MRF6VP41KHR7 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6VP41KHR7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case NI-1230
PackagingTape & Reel (TR)
Published 2012
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 110V
Frequency 450MHz
Base Part Number MRF6VP41
Current - Test 150mA
Transistor Type LDMOS (Dual)
Gain 20dB
Power - Output 1000W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:52 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$231.562017$231.562017
10$218.454733$2184.54733
100$206.089371$20608.9371
500$194.423935$97211.9675
1000$183.418807$183418.807

MRF6VP41KHR7 Product Details

MRF6VP41KHR7 Description

MRF6VP41KHR7 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6VP41KHR7 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6VP41KHR7 has the common source configuration.

MRF6VP41KHR7 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MRF6VP41KHR7 Applications

ISM applications

DC large signal applications


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