Name: IRF520
Brand: STMicroelectronics
SKU: IRF520
Price: 0.33000 USD
Availability: InStock

new-10%

IRF520

Manufacturer part number:IRF520

Manufacturer:STMicroelectronics

Description:IRF520 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:IRF520 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IRF5
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	60W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	0.27Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	100 mJ
Feedback Cap-Max (Crss)	100 pF
Turn Off Time-Max (toff)	50ns
Turn On Time-Max (ton)	115ns
RoHS Status	Non-RoHS Compliant

IRF520 Product Details

IRF520 Description

A IRF520 enhancement-mode n-channel MOSFET. Image courtesy of Linear Systems. Figure 1 shows the structure of an n-channel enhancement-mode MOSFET. Figure 1. n-channel enhancement-mode MOSFET. A p-type substrate provides physical support for the device. Two heavily doped n-type regions make the source and drain.