FDN338P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN338P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
115mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-1.6A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
10 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
115m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
451pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.6A Ta
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 4.5V
Rise Time
11ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
1.6A
Threshold Voltage
-800mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-800 mV
Height
1.22mm
Width
3.05mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:12660 items
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FDN338P Product Details
FDN338P Description
The FDN338P is a 2.5V P-channel MOSFET that uses the PowerTrench? low voltage technology. It was designed with battery power management and load switching in mind. In the same footprint, the SuperSOTTM -3 has a lower RDS (ON) and a 30% better power handling capabilities than the SOT23.
FDN338P Features
–1.6 A, –20 V RDS(ON)= 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT? -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint
FDN338P Applications
Battery Management Load Switch Battery Protection This product is general usage and suitable for many different applications
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