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NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

NP82N055NUG-S18-AY Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature175°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta 143W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.6pF @ 25V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 55V
RoHS StatusROHS3 Compliant
In-Stock:4064 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.98000$1.98
500$1.9602$980.1
1000$1.9404$1940.4
1500$1.9206$2880.9
2000$1.9008$3801.6
2500$1.881$4702.5

About NP82N055NUG-S18-AY

The NP82N055NUG-S18-AY from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features N-CHANNEL POWER MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NP82N055NUG-S18-AY, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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