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RDX080N50FU6

RDX080N50FU6

RDX080N50FU6

ROHM Semiconductor

MOSFET N-CH 500V 8A TO-220FM

SOT-23

RDX080N50FU6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature150°C TJ
PackagingBulk
Published 2006
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
Power Dissipation40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
Drain to Source Breakdown Voltage 500V
RoHS StatusROHS3 Compliant
In-Stock:3042 items

About RDX080N50FU6

The RDX080N50FU6 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 500V 8A TO-220FM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RDX080N50FU6, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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