NTMFS4C020NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTMFS4C020NT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.2W Ta 134W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10144pF @ 15V
Current - Continuous Drain (Id) @ 25°C
47A Ta 303A Tc
Gate Charge (Qg) (Max) @ Vgs
139nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:2856 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTMFS4C020NT1G Product Details
NTMFS4C020NT1G Description
The ON NTMFS4C020NT1G Industrial Power MOSFET is available in a 5x6mm flat lead package, which is ideal for compact and efficient designs with outstanding thermal performance.
NTMFS4C020NT1G Features
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Small Footprint (5x6 mm) for Compact Design
Optimized for 4.5 Gate Drive
NTMFS4C020NT1G Applications
Primary MOSFET in DC-DC modules
Synchronous Rectification in USB type C Designs
Switching Power Supplies
Reverse Battery Protection
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