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NTMFS4C020NT1G

NTMFS4C020NT1G

NTMFS4C020NT1G

ON Semiconductor

NTMFS4C020NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTMFS4C020NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 3.2W Ta 134W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10144pF @ 15V
Current - Continuous Drain (Id) @ 25°C 47A Ta 303A Tc
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:2856 items

Pricing & Ordering

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NTMFS4C020NT1G Product Details

NTMFS4C020NT1G Description


The ON NTMFS4C020NT1G Industrial Power MOSFET is available in a 5x6mm flat lead package, which is ideal for compact and efficient designs with outstanding thermal performance.



NTMFS4C020NT1G Features


  • Low RDS(on) to Minimize Conduction Losses

  • Low QG and Capacitance to Minimize Driver Losses

  • Small Footprint (5x6 mm) for Compact Design

  • Optimized for 4.5 Gate Drive



NTMFS4C020NT1G Applications


  • Primary MOSFET in DC-DC modules

  • Synchronous Rectification in USB type C Designs

  • Switching Power Supplies

  • Reverse Battery Protection


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