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R6515ENZC17

R6515ENZC17

R6515ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 315m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6515ENZC17 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature150°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 315m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:3927 items

R6515ENZC17 Product Details

R6515ENZC17 Overview


A device's maximum input capacitance is 910pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

R6515ENZC17 Features


a 650V drain to source voltage (Vdss)


R6515ENZC17 Applications


There are a lot of ROHM Semiconductor
R6515ENZC17 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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