R6520ENZC8 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 444 mJ.The maximum input capacitance of this device is 1.4nF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 20A.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 650V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
R6520ENZC8 Features
the avalanche energy rating (Eas) is 444 mJ
based on its rated peak drain current 60A.
a 650V drain to source voltage (Vdss)
R6520ENZC8 Applications
There are a lot of ROHM Semiconductor
R6520ENZC8 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
