SPA06N60C3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 52 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 18.6A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 750mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.
SPA06N60C3 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 18.6A.
single MOSFETs transistor is 750mOhm
a 650V drain to source voltage (Vdss)
SPA06N60C3 Applications
There are a lot of Infineon
SPA06N60C3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
