BD17610STU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.With a collector emitter saturation voltage of -800mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.An emitter's base voltage can be kept at -5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD17610STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD17610STU Applications
There are a lot of ON Semiconductor BD17610STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
