NSVBC858BLT1G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.
NSVBC858BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
NSVBC858BLT1G Applications
There are a lot of ON Semiconductor NSVBC858BLT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
