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2SD2195T100

2SD2195T100

2SD2195T100

ROHM Semiconductor

2SD2195T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2195T100 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2195
Pin Count3
Number of Elements 2
Polarity NPN
Element ConfigurationSingle
Power Dissipation500mW
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage100V
Transition Frequency 80MHz
Max Breakdown Voltage 100V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 1000
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1586 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.512582$0.512582
10$0.483567$4.83567
100$0.456196$45.6196
500$0.430373$215.1865
1000$0.406012$406.012

2SD2195T100 Product Details

2SD2195T100 Overview


DC current gain in this device equals 1000 @ 1A 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 80MHz in the part.Single BJT transistor can take a breakdown input voltage of 100V volts.Maximum collector currents can be below 2A volts.

2SD2195T100 Features


the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz

2SD2195T100 Applications


There are a lot of ROHM Semiconductor 2SD2195T100 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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