BD651-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A maximum collector current of 8A volts is possible.
BD651-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
BD651-S Applications
There are a lot of Bourns Inc. BD651-S applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface