MPSW45RLRE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25000 @ 200mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 2mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 100MHz is present in the part.A maximum collector current of 1A volts can be achieved.
MPSW45RLRE Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45RLRE Applications
There are a lot of ON Semiconductor MPSW45RLRE applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
