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2SD2150T100S

2SD2150T100S

2SD2150T100S

ROHM Semiconductor

2SD2150T100S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2150T100S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation500mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating3A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2150
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product290MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage20V
Transition Frequency 290MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 3A
VCEsat-Max 0.5 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1419 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.073520$0.07352
500$0.054059$27.0295
1000$0.045049$45.049
2000$0.041329$82.658
5000$0.038626$193.13
10000$0.035931$359.31
15000$0.034749$521.235
50000$0.034168$1708.4

2SD2150T100S Product Details

2SD2150T100S Overview


DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 3A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).290MHz is present in the transition frequency.As a result, it can handle voltages as low as 20V volts.A maximum collector current of 3A volts can be achieved.

2SD2150T100S Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 290MHz

2SD2150T100S Applications


There are a lot of ROHM Semiconductor 2SD2150T100S applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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