Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SD1766T100Q

2SD1766T100Q

2SD1766T100Q

ROHM Semiconductor

2SD1766T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1766T100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating2A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1766
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage32V
Transition Frequency 100MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
VCEsat-Max 0.8 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2318 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.197754$0.197754
10$0.186560$1.8656
100$0.176000$17.6
500$0.166038$83.019
1000$0.156639$156.639

2SD1766T100Q Product Details

2SD1766T100Q Overview


In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 100MHz is present in the part.The breakdown input voltage is 32V volts.A maximum collector current of 2A volts can be achieved.

2SD1766T100Q Features


the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

2SD1766T100Q Applications


There are a lot of ROHM Semiconductor 2SD1766T100Q applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News